CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H01L 21/7685 (2013.01); H01L 21/76877 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a first dielectric layer over a contact feature using flowable chemical vapor deposition (FCVD) or spin-on coating, the first dielectric layer comprising a first top surface;
forming a contact via extending through the first dielectric layer and having a second top surface above the first top surface of the first dielectric layer;
depositing a barrier layer over the first dielectric layer and the contact via;
planarizing the barrier layer by chemical mechanical polishing to expose the first top surface of the contact via while the first dielectric layer remains covered by the barrier layer; and
after the planarizing, patterning the barrier layer to form a patterned barrier layer and expose a portion of the first dielectric layer.
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