US 12,009,276 B2
Semiconductor package including lid with integrated heat pipe for thermal management and methods for forming the same
Yu-Sheng Lin, Zhubei (TW); Shu-Shen Yeh, Taoyuan (TW); Chin-Hua Wang, New Taipei (TW); Po-Yao Lin, Zhudong Township (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Aug. 20, 2021, as Appl. No. 17/407,224.
Prior Publication US 2023/0057025 A1, Feb. 23, 2023
Int. Cl. H01L 23/053 (2006.01); H01L 21/52 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/427 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC H01L 23/3672 (2013.01) [H01L 21/52 (2013.01); H01L 23/053 (2013.01); H01L 23/3736 (2013.01); H01L 23/427 (2013.01); H01L 23/49833 (2013.01); H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a package substrate;
at least one semiconductor device mounted to the package substrate; and
a lid attached to the package substrate and extending over the at least one semiconductor device, the lid comprising at least one heat pipe located on or in the lid and extending between a central region of the semiconductor package including a relatively higher density of semiconductor devices and a peripheral region of the semiconductor package including a relatively lower density of semiconductor devices, wherein the at least one heat pipe comprises:
an outer wall enclosing a central fluid conduit;
a working fluid enclosed within the outer wall, wherein a first portion of the working fluid is in a liquid phase and a second portion of the working fluid is in a gas phase at an operating temperature of the semiconductor package; and
a wick structure enclosed within the outer wall and configured to exert a capillary action on the working fluid that is in a liquid phase.
 
16. A semiconductor package, comprising:
a package substrate;
at least one semiconductor device mounted to the package substrate; and
a lid attached to the package substrate and including an upper portion extending over the at least one semiconductor device, the lid comprising at least one heat pipe located on or in the lid and including a height dimension that is at least 10% of a thickness of the upper portion of the lid, wherein the at least one heat pipe comprises:
an outer wall enclosing a central fluid conduit;
a working fluid enclosed within the outer wall, wherein a first portion of the working fluid is in a liquid phase and a second portion of the working fluid is in a gas phase at an operating temperature of the semiconductor package; and
a wick structure enclosed within the outer wall and configured to exert a capillary action on the working fluid that is in a liquid phase.
 
18. A semiconductor package, comprising:
a package substrate;
at least one semiconductor device mounted to the package substrate; and
a lid comprising:
at least one sidewall portion laterally surrounding the at least one semiconductor device that is mounted to the package substrate;
an upper portion extending from the at least one sidewall portion over an upper surface of the at least one semiconductor device; and
a plurality of heat pipes contacting and thermally-integrated with the upper portion of the lid and configured to spread heat within the upper portion of the lid, wherein each of the heat pipes comprises:
an outer wall enclosing a central fluid conduit;
a working fluid enclosed within the outer wall, wherein a first portion of the working fluid is in a liquid phase and a second portion of the working fluid is in a gas phase at an operating temperature of the semiconductor package; and
a wick structure enclosed within the outer wall and configured to exert a capillary action on the working fluid that is in a liquid phase.