US 12,009,265 B2
Slot contacts and method forming same
Lin-Yu Huang, Hsinchu (TW); Li-Zhen Yu, New Taipei (TW); Sheng-Tsung Wang, Hsinchu (TW); Jia-Chuan You, Dayuan Township (TW); Chia-Hao Chang, Hsinchu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 19, 2022, as Appl. No. 18/068,110.
Application 17/178,762 is a division of application No. 16/373,215, filed on Apr. 2, 2019, granted, now 10,943,829, issued on Mar. 9, 2021.
Application 18/068,110 is a continuation of application No. 17/178,762, filed on Feb. 18, 2021, granted, now 11,532,518.
Claims priority of provisional application 62/749,207, filed on Oct. 23, 2018.
Prior Publication US 2023/0119732 A1, Apr. 20, 2023
Int. Cl. H01L 21/8234 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a plurality of source/drain regions;
a plurality of gate stacks, each between two of the plurality of source/drain regions;
a gate contact plug over and contacting one of the plurality of gate stacks; and
a first plurality of strips parallel to each other, wherein a discrete strip among the first plurality of strips comprises:
a plurality of source/drain contact plugs over and electrically coupling to the plurality of source/drain regions; and
a conductive feature over and contacting a source/drain contact plug among the plurality of source/drain contact plugs, wherein the conductive feature is formed of a same material as the gate contact plug, and wherein a first sidewall of the source/drain contact plug is vertically aligned to a second sidewall of the conductive feature.