CPC H01L 21/823475 (2013.01) [H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 2029/7858 (2013.01)] | 20 Claims |
1. A structure comprising:
a plurality of source/drain regions;
a plurality of gate stacks, each between two of the plurality of source/drain regions;
a gate contact plug over and contacting one of the plurality of gate stacks; and
a first plurality of strips parallel to each other, wherein a discrete strip among the first plurality of strips comprises:
a plurality of source/drain contact plugs over and electrically coupling to the plurality of source/drain regions; and
a conductive feature over and contacting a source/drain contact plug among the plurality of source/drain contact plugs, wherein the conductive feature is formed of a same material as the gate contact plug, and wherein a first sidewall of the source/drain contact plug is vertically aligned to a second sidewall of the conductive feature.
|