US 12,009,261 B2
Nanosheet devices with hybrid structures and methods of fabricating the same
Kuo-Cheng Chiang, Hsinchu County (TW); Shi Ning Ju, Hsinchu (TW); Guan-Lin Chen, Hsinchu County (TW); Jung-Chien Cheng, Tainan (TW); Chih-Hao Wang, Hsinchu County (TW); and Kuan-Lun Cheng, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Nov. 5, 2021, as Appl. No. 17/520,385.
Claims priority of provisional application 63/146,149, filed on Feb. 5, 2021.
Prior Publication US 2022/0254882 A1, Aug. 11, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/823412 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
10. A semiconductor structure, comprising:
a first fin structure including a first stack of active channel layers and protruding from a substrate;
a second fin structure including a second stack of active channel layers disposed over at least one dummy channel layer and protruding from the substrate;
a gate structure engaged with the first stack and the second stack;
a first source/drain (S/D) feature disposed in the first fin structure and adjacent to the first stack, wherein the first S/D feature includes a first doped epitaxial layer over an un-doped epitaxial layer; and
a second S/D feature disposed in the second fin structure and adjacent to the second stack, wherein the second S/D feature includes a second doped epitaxial layer over the un-doped epitaxial layer, and wherein the un-doped epitaxial layer overlaps with the at least one dummy channel layer.