US 12,009,238 B2
Apparatus for fabricating a semiconductor device and method for fabricating semiconductor device
Po-Chien Huang, Hsinchu (TW); Chung-Hung Lin, Tainan (TW); and Chih-Wei Wen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 30, 2021, as Appl. No. 17/364,457.
Application 17/364,457 is a division of application No. 16/258,824, filed on Jan. 28, 2019, granted, now 11,088,003.
Prior Publication US 2021/0327735 A1, Oct. 21, 2021
Int. Cl. H01L 21/673 (2006.01); G03F 1/62 (2012.01); G03F 1/66 (2012.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01T 23/00 (2006.01)
CPC H01L 21/67359 (2013.01) [G03F 1/62 (2013.01); G03F 1/66 (2013.01); G03F 7/70716 (2013.01); G03F 7/70925 (2013.01); H01L 21/0337 (2013.01); H01T 23/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor structure, comprising:
disposing a mask at a first position in a first chamber;
inspecting the mask in the first chamber;
generating a first plurality of ions toward the mask by a first ionizer in the first chamber;
generating a second plurality of ions toward the mask by a second ionizer in a second chamber different from the first chamber; and
irradiating actinic radiation through the mask in the second chamber.