CPC H01L 21/67359 (2013.01) [G03F 1/62 (2013.01); G03F 1/66 (2013.01); G03F 7/70716 (2013.01); G03F 7/70925 (2013.01); H01L 21/0337 (2013.01); H01T 23/00 (2013.01)] | 20 Claims |
1. A method for fabricating a semiconductor structure, comprising:
disposing a mask at a first position in a first chamber;
inspecting the mask in the first chamber;
generating a first plurality of ions toward the mask by a first ionizer in the first chamber;
generating a second plurality of ions toward the mask by a second ionizer in a second chamber different from the first chamber; and
irradiating actinic radiation through the mask in the second chamber.
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