US 12,009,222 B2
Method for forming semiconductor device structure
Yu-Chen Wei, New Taipei (TW); Chun-Chieh Chan, Hsinchu (TW); Chun-Jui Chu, Taoyuan (TW); Jen-Chieh Lai, Tainan (TW); and Shih-Ho Lin, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 20, 2021, as Appl. No. 17/556,032.
Application 17/556,032 is a continuation of application No. 16/858,820, filed on Apr. 27, 2020, granted, now 11,239,092.
Application 16/858,820 is a continuation of application No. 16/027,869, filed on Jul. 5, 2018, granted, now 10,636,673, issued on Apr. 28, 2020.
Claims priority of provisional application 62/564,396, filed on Sep. 28, 2017.
Prior Publication US 2022/0115243 A1, Apr. 14, 2022
Int. Cl. H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/302 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/3212 (2013.01) [H01L 21/02074 (2013.01); H01L 21/0228 (2013.01); H01L 21/28 (2013.01); H01L 21/302 (2013.01); H01L 21/32139 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/76829 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a first layer over a substrate;
forming a stop layer over the first layer;
forming a second layer over the stop layer, wherein the second layer is in direct contact with the stop layer;
partially removing the second layer;
performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures comprise the stop layer and the upper portion of the first layer remaining after the etching process; and
removing the protrusion structures.