US 12,009,215 B2
Semiconductor device structure with silicide layer
Chun-Hsiung Lin, Zhubei (TW); Jung-Hung Chang, Changhua County (TW); Shih-Cheng Chen, New Taipei (TW); Kuo-Cheng Chiang, Zhubei (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 21, 2023, as Appl. No. 18/305,074.
Application 18/305,074 is a continuation of application No. 17/397,126, filed on Aug. 9, 2021, granted, now 11,664,230.
Application 17/397,126 is a continuation of application No. 16/995,223, filed on Aug. 17, 2020, granted, now 11,087,988, issued on Aug. 10, 2021.
Application 16/995,223 is a continuation of application No. 16/539,225, filed on Aug. 13, 2019, granted, now 10,748,775, issued on Aug. 18, 2020.
Claims priority of provisional application 62/738,237, filed on Sep. 28, 2018.
Prior Publication US 2023/0260793 A1, Aug. 17, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/285 (2006.01); H01L 21/764 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/28518 (2013.01) [H01L 21/764 (2013.01); H01L 29/0653 (2013.01); H01L 29/45 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate having a base portion and a fin portion over the base portion;
an epitaxial structure over the fin portion;
a dielectric fin over the base portion; and
a silicide layer between the dielectric fin and the epitaxial structure, wherein a void is between the silicide layer and the dielectric fin.