US 12,009,191 B2
Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
Patrick Tae, Sunnyvale, CA (US); Blake W. Erickson, Gilroy, CA (US); Zhaozhao Zhu, Milpitas, CA (US); Michael David Willwerth, Campbell, CA (US); and Barry Paul Craver, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 12, 2020, as Appl. No. 16/946,263.
Prior Publication US 2021/0391157 A1, Dec. 16, 2021
Int. Cl. H01J 37/32 (2006.01); G01B 11/06 (2006.01); H01L 21/66 (2006.01)
CPC H01J 37/32972 (2013.01) [G01B 11/0625 (2013.01); G01B 11/0683 (2013.01); H01J 37/32467 (2013.01); H01J 37/32862 (2013.01); H01J 37/32963 (2013.01); H01L 22/26 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/332 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system comprising:
a transparent crystal, wherein at least part of the transparent crystal is embedded within a wall and a liner of a processing chamber;
a transparent thin film deposited on a surface of the transparent crystal that is exposed to an interior of the processing chamber;
a spectrometer configured to:
receive light reflected from a surface of the transparent thin film and a surface of a process film layer deposited on the transparent thin film; and
detect a first spectrum within the received light that is representative of the process film layer; and
a processing device coupled to the spectrometer and configured to:
receive, from the spectrometer, the first spectrum;
receive, from the spectrometer, a second spectrum when a source of the received light is off;
generate a reflectometry signal based on a reference spectrum and a difference between the second spectrum and the first spectrum; and
fit the reflectometry signal to a thin film optical model to determine information comprising one or more optical film property of the process film layer.