CPC H01J 37/304 (2013.01) [G03F 7/70516 (2013.01); G03F 7/7055 (2013.01); G03F 7/70616 (2013.01); H01J 37/3002 (2013.01); H01L 27/1446 (2013.01); H01L 31/02005 (2013.01); H01L 31/1136 (2013.01); H01L 31/18 (2013.01)] | 20 Claims |
1. A method, comprising:
applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit, wherein the first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage;
performing a pre-exposure reading operation on the detector unit of the semiconductor detector;
projecting light of an exposure apparatus to a gate of the second transistor of the detector unit after applying the first and second voltages;
performing a post-exposure reading operation on the detector unit of the semiconductor detector;
comparing data of the pre-exposure reading operation with the post-exposure reading operation; and
adjusting an intensity of the light based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
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