US 12,009,177 B2
Detection using semiconductor detector
Ya-Chin King, Taipei (TW); Chrong-Jung Lin, Hsinchu (TW); Burn-Jeng Lin, Hsinchu (TW); Chien-Ping Wang, Kaohsiung (TW); Shao-Hua Wang, Taoyuan (TW); Chun-Lin Chang, Hsinchu County (TW); and Li-Jui Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed on Feb. 9, 2021, as Appl. No. 17/171,939.
Claims priority of provisional application 63/045,764, filed on Jun. 29, 2020.
Prior Publication US 2021/0407764 A1, Dec. 30, 2021
Int. Cl. H01J 37/304 (2006.01); G03F 7/00 (2006.01); H01J 37/30 (2006.01); H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/113 (2006.01); H01L 31/18 (2006.01)
CPC H01J 37/304 (2013.01) [G03F 7/70516 (2013.01); G03F 7/7055 (2013.01); G03F 7/70616 (2013.01); H01J 37/3002 (2013.01); H01L 27/1446 (2013.01); H01L 31/02005 (2013.01); H01L 31/1136 (2013.01); H01L 31/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit, wherein the first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage;
performing a pre-exposure reading operation on the detector unit of the semiconductor detector;
projecting light of an exposure apparatus to a gate of the second transistor of the detector unit after applying the first and second voltages;
performing a post-exposure reading operation on the detector unit of the semiconductor detector;
comparing data of the pre-exposure reading operation with the post-exposure reading operation; and
adjusting an intensity of the light based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.