US 12,009,028 B2
Auto-referenced memory cell read techniques
Graziano Mirichigni, Vimercate (IT); Paolo Amato, Treviglio (IT); Federico Pio, Brugherio (IT); Alessandro Orlando, Naples (IT); and Marco Sforzin, Cernusco sul Naviglio (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 17, 2022, as Appl. No. 17/697,567.
Application 17/062,127 is a division of application No. 16/791,764, filed on Feb. 14, 2020, granted, now 10,896,727, issued on Jan. 19, 2021.
Application 16/536,120 is a division of application No. 15/853,364, filed on Dec. 22, 2017, granted, now 10,431,301, issued on Oct. 1, 2019.
Application 17/697,567 is a continuation of application No. 17/062,127, filed on Oct. 2, 2020, granted, now 11,282,574.
Application 16/791,764 is a continuation of application No. 16/536,120, filed on Aug. 8, 2019, granted, now 10,600,480, issued on Mar. 24, 2020.
Prior Publication US 2022/0208262 A1, Jun. 30, 2022
Int. Cl. G11C 7/10 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); G11C 7/06 (2006.01)
CPC G11C 13/004 (2013.01) [G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 13/003 (2013.01); H10B 63/84 (2023.02); H10N 70/231 (2023.02); G11C 7/06 (2013.01); G11C 7/1006 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01); G11C 2213/76 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
applying a read voltage to a set of memory cells;
updating a value of a counter to indicate a quantity of memory cells that are activated based at least in part on the read voltage being applied, the activated memory cells included in the set of memory cells;
performing, after updating the value of the counter, a comparison of the value of the counter indicating the quantity of activated memory cells to a threshold quantity of memory cells; and
reading the set of memory cells based at least in part on the comparison.