US 12,008,270 B2
System, device, and method for memory interface including reconfigurable channel
Youngwook Kim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 25, 2022, as Appl. No. 17/994,077.
Application 17/994,077 is a continuation of application No. 17/209,790, filed on Mar. 23, 2021, granted, now 11,556,279.
Claims priority of application No. 10-2020-0105538 (KR), filed on Aug. 21, 2020; and application No. 10-2020-0149596 (KR), filed on Nov. 10, 2020.
Prior Publication US 2023/0092562 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a nonvolatile memory including a first region and a second region; and
a controller coupled to the nonvolatile memory,
wherein in a first mode, the controller is configured to perform a first operation by communicating with the first region of the nonvolatile memory via both a first sub-channel and a second sub-channel,
in a second mode, the controller is configured to perform a second operation by communicating with the first region of the nonvolatile memory via the first sub-channel and to perform a third operation by communicating with the second region of the nonvolatile memory via the second sub-channel,
the controller is configured to perform the second operation during a first time period and the third operation during a second time period, and
a first time period is at least partially overlapped a second time period.