US 12,008,262 B2
Read voltage control method, memory storage device and memory control circuit unit
Shih-Jia Zeng, Hsinchu (TW); Chun-Wei Tsao, Taoyuan (TW); Chih-Wei Wang, Tainan (TW); and Wei Lin, Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Oct. 27, 2020, as Appl. No. 17/080,854.
Claims priority of application No. 109134729 (TW), filed on Oct. 7, 2020.
Prior Publication US 2022/0107756 A1, Apr. 7, 2022
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A read voltage control method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of memory cells, and the read voltage control method comprises:
sending a first read command sequence which instructs a reading of a plurality of first memory cells in the memory cells by using a first voltage level to obtain first data, wherein the first data is a total number of memory cells turned on by the first voltage level in the first memory cells;
determining a channel parameter according to curve information of a threshold voltage distribution of the first memory cells, wherein the curve information describes at least one of a curve endpoint, a curve type, a curve peak value and a curve slope of the threshold voltage distribution, and the threshold voltage distribution presents a number of memory cells each having a specific threshold voltage among the first memory cells;
obtaining first adjustment information of a read voltage according to the first data and the channel parameter of the first memory cells, wherein the channel parameter reflects a channel status of the first memory cells; and
adjusting a voltage level of the read voltage from the first voltage level to a second voltage level according to the first adjustment information.