US 12,008,239 B1
Memory management method, memory storage device and memory control circuit unit
Wei-Cheng Li, Miaoli County (TW); Ping-Cheng Chen, Taoyuan (TW); Yu-Chung Shen, Miaoli County (TW); and Jia-Li Xu, New Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Jan. 9, 2023, as Appl. No. 18/151,470.
Claims priority of application No. 111146384 (TW), filed on Dec. 2, 2022.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/061 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A memory management method, configured for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and the memory management method comprises:
sending an erase command sequence, wherein the erase command sequence is configured to erase a first physical erasing unit in the plurality of physical erasing units; and
sending a write command sequence with correspondence to the erasing of the first physical erasing unit, wherein the write command sequence is configured to perform a dummy write operation on a second physical erasing unit in the plurality of physical erasing units, and
the dummy write operation is configured to store dummy data to the second physical erasing unit.