CPC C23C 18/122 (2013.01) [C08J 7/048 (2020.01); C08J 7/06 (2013.01); C23C 16/34 (2013.01); C23C 18/1233 (2013.01); C23C 18/14 (2013.01); C23C 18/04 (2013.01); H10K 50/844 (2023.02)] | 13 Claims |
1. A barrier film, comprising:
a base layer; and
an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS,
wherein the film has a water vapor transmission rate of 5.0×10−4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, and
wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, and
wherein the second region satisfies the relationship of Si content>N content>O content.
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