US 12,006,575 B2
Barrier film
Sung Jin Shin, Daejeon (KR); Jang Yeon Hwang, Daejeon (KR); Hee Joon Jeong, Daejeon (KR); Bo Ra Park, Daejeon (KR); and Hee Wang Yang, Daejeon (KR)
Assigned to LG CHEM, LTD., Seoul (KR)
Appl. No. 17/286,880
Filed by LG CHEM, LTD., Seoul (KR)
PCT Filed Oct. 22, 2019, PCT No. PCT/KR2019/013859
§ 371(c)(1), (2) Date Apr. 20, 2021,
PCT Pub. No. WO2020/085747, PCT Pub. Date Apr. 30, 2020.
Claims priority of application No. 10-2018-0128816 (KR), filed on Oct. 26, 2018.
Prior Publication US 2021/0381109 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 18/12 (2006.01); C08J 7/048 (2020.01); C08J 7/06 (2006.01); C23C 16/34 (2006.01); C23C 18/14 (2006.01); C23C 18/04 (2006.01); H10K 50/844 (2023.01)
CPC C23C 18/122 (2013.01) [C08J 7/048 (2020.01); C08J 7/06 (2013.01); C23C 16/34 (2013.01); C23C 18/1233 (2013.01); C23C 18/14 (2013.01); C23C 18/04 (2013.01); H10K 50/844 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A barrier film, comprising:
a base layer; and
an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS,
wherein the film has a water vapor transmission rate of 5.0×10−4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, and
wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, and
wherein the second region satisfies the relationship of Si content>N content>O content.