CPC B81C 1/00595 (2013.01) [B81B 3/0081 (2013.01); B81C 1/0069 (2013.01); G01J 5/20 (2013.01); B81B 2201/0207 (2013.01); B81B 2203/019 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/014 (2013.01)] | 15 Claims |
1. A method of manufacturing an electromechanical systems structure comprising:
providing a stack, wherein the stack comprises:
a structural layer extending in a plane,
a sidewall layer comprising:
a first portion lying in a plane parallel to the structural layer plane and
a second portion lying in a plane transverse to the structural layer plane,
an etch-stop layer, positioned between the sidewall layer and the structural layer,
comprising an etch-selectivity different from an etch-selectivity of the structural
layer and an etch-selectivity of the sidewall layer, and
a mold comprising a wall parallel to the sidewall layer's second portion;
positioning a sacrificial layer between the structural layer and a substrate;
etching the sidewall layer's first portion to expose the etch-stop layer;
removing the mold;
etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
removing the sidewall layer's second portion; and
etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.
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11. A bolometer comprising:
a glass substrate;
a structure coupled to the glass substrate; and
a bolometer pixel coupled to the structure,
wherein the structure is manufactured by:
providing a stack, wherein the stack comprises:
a structural layer extending in a plane,
a sidewall layer comprising:
a first portion lying in a plane parallel to the structural layer plane and
a second portion lying in a plane transverse to the structural layer plane,
an etch-stop layer, positioned between the sidewall layer and the structural layer, comprising an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and
a mold comprising a wall parallel to the sidewall layer's second portion;
positioning a sacrificial layer between the structural layer and a substrate;
etching the sidewall layer's first portion to expose the etch-stop layer;
removing the mold;
etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
removing the sidewall layer's second portion; and
etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.
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