US 12,329,047 B2
Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same
Woo Cheol Lee, Icheon-si (KR); and Won Tae Koo, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Aug. 4, 2022, as Appl. No. 17/881,057.
Claims priority of application No. 10-2022-0031717 (KR), filed on Mar. 14, 2022.
Prior Publication US 2023/0292636 A1, Sep. 14, 2023
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 63/00 (2023.02); H10N 70/023 (2023.02)] 28 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode;
a first resistance change layer disposed on the first electrode;
a conduction control layer disposed on the first resistance change layer and including a metal-organic framework layer and metal particles embedded in the metal-organic framework layer;
a second resistance change layer disposed on the conduction control layer; and
a second electrode disposed on the second resistance change layer.