US 12,329,040 B2
Multiferroic tunnel junction memory device and related methods
Matt Bauer, Melbourne, FL (US); and Steven R. Snyder, Palm Bay, FL (US)
Assigned to EAGLE TECHNOLOGY, LLC, Melbourne, FL (US)
Filed by EAGLE TECHNOLOGY, LLC, Melbourne, FL (US)
Filed on Jan. 25, 2022, as Appl. No. 17/583,564.
Prior Publication US 2023/0240152 A1, Jul. 27, 2023
Int. Cl. H10N 52/00 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC H10N 52/00 (2023.02) [H10B 61/20 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] 23 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first electrode;
a first magnetostrictive layer electrically coupled to the first electrode;
a first ferroelectric layer above the first magnetostrictive layer;
a ferromagnetic layer above the first ferroelectric layer;
a second electrode electrically coupled to the ferromagnetic layer;
a second ferroelectric layer above the ferromagnetic layer;
a second magnetostrictive layer above the second ferroelectric layer; and
a third electrode electrically coupled to the second magnetostrictive layer;
the first ferroelectric layer being switchable responsive to a first voltage applied across the first and second electrodes, and the second ferroelectric layer being switchable independently from the first ferroelectric layer responsive to a second voltage applied across the second and third electrodes;
the first and second ferroelectric layers each being switchable between first and second memory states and retaining a prior respective ferroelectric state.