US 12,329,038 B2
Magnetoresistance memory device
Taiga Isoda, Seoul (KR); Eiji Kitagawa, Seoul (KR); Young Min Eeh, Seongnam-si (KR); Tadaaki Oikawa, Seoul (KR); and Kazuya Sawada, Seoul (KR)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Dec. 13, 2021, as Appl. No. 17/549,248.
Claims priority of application No. 2021-147086 (JP), filed on Sep. 9, 2021.
Prior Publication US 2023/0072970 A1, Mar. 9, 2023
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A magnetoresistive memory device comprising:
a first ferromagnetic layer;
a first ferromagnetic oxide layer including one of iron and cobalt;
a first metal layer between the first ferromagnetic layer and the first ferromagnetic oxide layer, wherein the first metal layer antiferromagnetically couples the first ferromagnetic layer and the first ferromagnetic oxide layer, and has a surface in contact with the first ferromagnetic layer;
a second ferromagnetic layer on a surface of the first ferromagnetic oxide layer that is opposite to the first metal layer, the second ferromagnetic layer including the one of iron and cobalt that is included in the first ferromagnetic oxide layer, and having an easy magnetization axis extending in a direction across an interface with the first metal layer;
a second metal layer provided on a surface of the second ferromagnetic layer that is opposite to the first ferromagnetic layer;
a third ferromagnetic layer on the second metal layer;
an insulating layer on the third ferromagnetic layer; and
a fourth ferromagnetic layer on the insulating layer.