US 12,329,037 B2
Method for fabricating semiconductor device
Tai-Cheng Hou, Tainan (TW); Chau-Chung Hou, Tainan (TW); Da-Jun Lin, Kaohsiung (TW); Wei-Xin Gao, Tainan (TW); Fu-Yu Tsai, Tainan (TW); and Bin-Siang Tsai, Changhua County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 12, 2021, as Appl. No. 17/548,576.
Claims priority of application No. 202111338561.9 (CN), filed on Nov. 12, 2021.
Prior Publication US 2023/0157180 A1, May 18, 2023
Int. Cl. H10N 50/01 (2023.01); G11C 11/16 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H01L 21/7684 (2013.01); H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ;
forming a first inter-metal dielectric (IMD) layer on the MTJ;
removing part of the first IMD layer to form a damaged layer in the first IMD layer and a trench exposing the damaged layer on the MTJ, wherein a bottom surface of the damaged layer directly contacting the first IMD layer at a bottom of the trench is higher than a top surface of the top electrode; and
performing a ultraviolet (UV) curing process.