US 12,329,036 B2
Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device
Yusuke Sato, Tokyo (JP); Mirai Ishida, Tokyo (JP); Wakiko Sato, Tokyo (JP); Hiroshi Funakubo, Tokyo (JP); Takao Shimizu, Tokyo (JP); Miyu Hasegawa, Tokyo (JP); and Keisuke Ishihama, Tokyo (JP)
Assigned to TDK Corporation, Tokyo (JP); and TOKYO INSTITUTE OF TECHNOLOGY, Tokyo (JP)
Appl. No. 17/274,897
Filed by TDK Corporation, Tokyo (JP); and TOKYO INSTITUTE OF TECHNOLOGY, Tokyo (JP)
PCT Filed Sep. 11, 2019, PCT No. PCT/JP2019/035761
§ 371(c)(1), (2) Date Mar. 10, 2021,
PCT Pub. No. WO2020/054779, PCT Pub. Date Mar. 19, 2020.
Claims priority of application No. 2018-170608 (JP), filed on Sep. 12, 2018.
Prior Publication US 2022/0059753 A1, Feb. 24, 2022
Int. Cl. H01L 41/187 (2006.01); B41J 2/14 (2006.01); C04B 35/475 (2006.01); G01C 19/5607 (2012.01); G01L 1/16 (2006.01); G11B 5/127 (2006.01); H01L 41/08 (2006.01); H01L 41/316 (2013.01); H01L 41/319 (2013.01); H10N 30/00 (2023.01); H10N 30/076 (2023.01); H10N 30/079 (2023.01); H10N 30/853 (2023.01)
CPC H10N 30/8561 (2023.02) [B41J 2/14201 (2013.01); C04B 35/475 (2013.01); G01C 19/5607 (2013.01); G01L 1/16 (2013.01); G11B 5/127 (2013.01); H10N 30/076 (2023.02); H10N 30/079 (2023.02); H10N 30/708 (2024.05); C04B 2235/3236 (2013.01); C04B 2235/761 (2013.01); C04B 2235/765 (2013.01); C04B 2235/768 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A dielectric thin film, including:
a metal oxide,
wherein the metal oxide includes bismuth, sodium, barium, and titanium,
at least a part of the metal oxide is a tetragonal crystal having a perovskite structure,
a (100) plane of the entirety of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film, and
the metal oxide is expressed by Chemical Formula 1 as follows:
(1−x)(Bi0.5Na0.5)TiO3-xBaTiO3  (1),
where x satisfies 0.30≤x≤0.40.