US 12,329,017 B2
Optoelectronic device manufacturing method
François Templier, Grenoble (FR); Roch Espiau de Lamaestre, Grenoble (FR); and Tony Maindron, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on Aug. 16, 2022, as Appl. No. 17/888,852.
Claims priority of application No. 2108773 (FR), filed on Aug. 19, 2021; and application No. 2111478 (FR), filed on Oct. 28, 2021.
Prior Publication US 2023/0054679 A1, Feb. 23, 2023
Int. Cl. H10K 59/65 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10K 59/12 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/65 (2023.02) [H10F 39/018 (2025.01); H10K 71/00 (2023.02); H10F 39/021 (2025.01); H10F 39/1843 (2025.01); H10F 39/811 (2025.01); H10K 59/12 (2023.02); H10K 59/1201 (2023.02)] 19 Claims
OG exemplary drawing
 
1. Optoelectronic device manufacturing method, comprising the successive steps of:
a) transferring an active inorganic photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a first semiconductor substrate; and
b) forming a plurality of organic light-emitting diodes on the active photosensitive diode stack,
wherein, at the end of step a), the active photosensitive diode stack continuously extends over the entire surface of the integrated control circuit,
the method further comprising, after step a) and before step b), the forming of conductive contacting vias crossing the active photosensitive diode stack and emerging onto metal connection pads of the integration control circuit,
and wherein, at the end of step b), the organic light-emitting diodes are connected to the integrated control circuit via said conductive vias.