US 12,328,981 B2
Electroluminescent device and display apparatus applying the same
Chun-Hsiang Chan, Hsinchu (TW); To-Cheng Fan, Hsinchu (TW); and Ting-Wei Tsai, Hsinchu (TW)
Assigned to AUO CORPORATION, Hsinchu (TW)
Filed by AUO Corporation, Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/868,829.
Claims priority of application No. 110130275 (TW), filed on Aug. 17, 2021.
Prior Publication US 2023/0056179 A1, Feb. 23, 2023
Int. Cl. H10H 20/851 (2025.01); H01L 25/075 (2006.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/856 (2025.01)
CPC H10H 20/8514 (2025.01) [H01L 25/0753 (2013.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/856 (2025.01)] 15 Claims
OG exemplary drawing
 
1. An electroluminescent device, comprising:
a first-conductivity-type semiconductor layer;
a second-conductivity-type semiconductor layer;
an active layer, disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer and electrically connected with these two,
wherein the first-conductivity-type semiconductor layer has a light-emitting surface disposed on a side opposite to the active layer; and comprises a plurality of three-dimensional (3D) structures arranged regularly, extending from the light-emitting surface towards the active layer to jointly define at least one cavity having a depth greater than 70% a thickness of the first-conductivity-type semiconductor layer;
a first electrode, electrically contacting to the first-conductivity-type semiconductor layer;
a second electrode electrically contacting to the second-conductivity-type semiconductor layer, and
an optical conversion material, filled in the at least one cavity.