US 12,328,978 B2
UV LED with electrode with irregular surface
Seong Kyu Jang, Ansan-si (KR); Ju Yong Park, Ansan-si (KR); Kyu Ho Lee, Ansan-si (KR); and Joon Hee Lee, Ansan-si (KR)
Assigned to Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed by Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed on Aug. 3, 2022, as Appl. No. 17/880,614.
Application 16/830,191 is a division of application No. 15/851,468, filed on Dec. 21, 2017, abandoned.
Application 17/880,614 is a continuation of application No. 16/830,191, filed on Mar. 25, 2020, granted, now 11,515,450.
Claims priority of application No. 10-2016-0178046 (KR), filed on Dec. 23, 2016.
Prior Publication US 2022/0376142 A1, Nov. 24, 2022
Int. Cl. H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01)
CPC H10H 20/835 (2025.01) [H10H 20/831 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01)] 13 Claims
OG exemplary drawing
 
8. A semiconductor light emitting device comprising:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer to emit ultraviolet light;
a second semiconductor layer disposed on the active layer;
a first electrode disposed on the first semiconductor layer and including a first region and a second region; and
a second electrode disposed on the second semiconductor layer,
wherein:
the first semiconductor layer includes a GaN layer,
the active layer includes a quantum well layer and a quantum barrier layer alternately stacked and each of the quantum well layer and the quantum barrier layer includes materials having different compositions, and have a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and
the first region is spaced apart from the first semiconductor layer and has a lower surface having an irregular shape, and the second region is disposed on and in contact with the first semiconductor layer.