US 12,328,976 B2
Light-emitting diode comprising a hybrid structure formed of layers and nanowire
Bruno Daudin, Grenoble (FR); Gwenole Jacopin, Grenoble (FR); and Julien Pernot, Grenoble (FR)
Assigned to COMMISARIAT A L'ENERGIE ATOMIQUE AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin-d'heres (FR)
Appl. No. 17/996,284
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin-d'Heres (FR)
PCT Filed Apr. 9, 2021, PCT No. PCT/FR2021/050630
§ 371(c)(1), (2) Date Oct. 14, 2022,
PCT Pub. No. WO2021/209702, PCT Pub. Date Oct. 21, 2021.
Claims priority of application No. 2003746 (FR), filed on Apr. 15, 2020.
Prior Publication US 2023/0215978 A1, Jul. 6, 2023
Int. Cl. H01L 33/32 (2010.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/8252 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/8215 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A light-emitting diode, comprising:
a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1>0 and X1+Y1≤1;
a second layer of p-doped AlX2Ga(1-X2-Y2)InY2N, with X2>0 and X2+Y2≤1;
an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure;
nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and
an ohmic contact layer in contact with the nanowires.