US 12,328,973 B2
Multi-quantum well structure and LED device including the same
Han Jiang, Wuhu (CN); Yung-Ling Lan, Wuhu (CN); Wen-Pin Huang, Wuhu (CN); Changwei Song, Wuhu (CN); Li-Cheng Huang, Wuhu (CN); Feilin Xun, Xiamen (CN); Chan-Chan Ling, Wuhu (CN); Chi-Ming Tsai, Wuhu (CN); and Chia-Hung Chang, Wuhu (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on Nov. 17, 2021, as Appl. No. 17/528,533.
Application 17/528,533 is a continuation in part of application No. 16/655,832, filed on Oct. 17, 2019, granted, now 11,189,751.
Application 16/655,832 is a continuation in part of application No. PCT/CN2018/078655, filed on Mar. 12, 2018.
Claims priority of application No. 201710252090.7 (CN), filed on Apr. 18, 2017.
Prior Publication US 2022/0077347 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/816 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/825 (2025.01); H10H 20/8162 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A multi-quantum well structure comprising:
a stress relief layer;
an electron-collecting layer disposed on said stress relief layer; and
an active layer including a first active layer unit that is disposed on said electron-collecting layer and that includes a plurality of potential barrier sub-layers and a plurality of potential well sub-layers being alternately stacked;
wherein
at least one of said potential barrier sub-layers of said first active layer unit has a GaN/Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1≤1 and 0≤y1<1,
said one of said potential barrier sub-layers having said GaN/Alx1Iny1Ga(1-x1-y1)N stack is disposed farthest away from said electron-collecting layer, and
said one of said potential barrier sub-layers of said first active layer unit farthest away from said electron-collecting layer is undoped, and for the remainder of said potential barrier sub-layers of said first active layer unit, each of said potential barrier sub-layers is one of a n-doped layer and a p-doped layer.