US 12,328,956 B2
Integrated circuit photodetector
Chun-Wei Hsu, Hsinchu (TW); Tsai-Hao Hung, Hsinchu (TW); Chung-Yu Lin, Hsinchu (TW); and Ying-Hsun Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 7, 2024, as Appl. No. 18/435,872.
Application 18/435,872 is a division of application No. 17/723,127, filed on Apr. 18, 2022, granted, now 11,923,396.
Application 17/723,127 is a continuation of application No. 16/788,145, filed on Feb. 11, 2020, granted, now 11,309,347, issued on Apr. 19, 2022.
Prior Publication US 2024/0178264 A1, May 30, 2024
Int. Cl. H10F 77/122 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01); H10F 77/40 (2025.01); H10F 77/70 (2025.01); H10F 77/12 (2025.01); H10F 77/123 (2025.01); H10F 77/124 (2025.01)
CPC H10F 39/18 (2025.01) [H10F 39/024 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 71/121 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01); H10F 77/703 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01); H10F 71/1212 (2025.01); H10F 71/1215 (2025.01); H10F 71/1253 (2025.01); H10F 71/1272 (2025.01); H10F 77/1237 (2025.01); H10F 77/1248 (2025.01); H10F 77/127 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a trench in a semiconductor substrate of an integrated circuit;
forming one or more dielectric structures of dielectric material protruding from a bottom surface of the trench; and
depositing a photosensitive material in the trench covering the one or more dielectric structures, wherein the photosensitive material has an index of refraction that is higher than an index of refraction the dielectric material of the one or more dielectric structures.