US 12,328,940 B2
Method of manufacturing semiconductor devices and semiconductor devices
Shahaji B. More, Hsinchu (TW); Chandrashekhar Prakash Savant, Hsinchu (TW); Tien-Wei Yu, Kaohsiung (TW); and Chia-Ming Tsai, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 14, 2022, as Appl. No. 17/865,328.
Application 17/865,328 is a division of application No. 16/934,916, filed on Jul. 21, 2020, granted, now 11,784,187.
Claims priority of provisional application 62/982,718, filed on Feb. 27, 2020.
Prior Publication US 2022/0352160 A1, Nov. 3, 2022
Int. Cl. H10D 84/85 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/856 (2025.01) [H10D 84/0177 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first field effect transistor (FET) including a first gate structure disposed over a first channel region; and
a second FET having a different conductivity type than the first FET and including a second gate structure disposed over a second channel region, wherein:
the first gate structure includes:
a first gate dielectric layer over the first channel region;
a first work function adjustment material layer over the first gate dielectric layer;
an adhesion enhancement layer disposed over the first work function adjustment material layer; and
a first metal gate electrode layer, the second gate structure includes:
a second gate dielectric layer over the second channel region;
a second work function adjustment material layer over the second gate dielectric layer; and
a second metal gate electrode layer, and
the first work function adjustment material layer is nitrogen free or contains nitrogen in an amount less than 50 atomic % and the adhesion enhancement layer contains nitrogen in a range from 55 atomic % to 75 atomic %, and
the second gate structure does not include the adhesion enhancement layer.