| CPC H10D 64/62 (2025.01) [H05K 1/181 (2013.01); H05K 3/303 (2013.01); H10D 64/01 (2025.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/32227 (2013.01)] | 11 Claims |

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1. A semiconductor element unit comprising:
a semiconductor element;
a first electrode having a flat first electrode mounting surface and a bonding surface opposite to the first electrode mounting surface, a roughness of the first electrode mounting surface being less than or equal to 10 [nm], the bonding surface of the first electrode forming eutectic bonding with the semiconductor element, and being in ohmic contact with the semiconductor element;
a second electrode provided at a position not contacting the semiconductor element or the first electrode and having a flat second electrode mounting surface;
a first insulation part formed to straddle a part of the semiconductor element and a part of the second electrode, the first insulation part having a first insulation part mounting surface formed on a same side as the first electrode mounting surface and the second electrode mounting surface;
a wiring part formed to be overlaid on the first insulation part and electrically connecting another part of the semiconductor element not covered by the first insulation part and another part of the second electrode not covered by the first insulation part to each other; and
a second insulation part covering the semiconductor element, the wiring part, the first insulation part and the second electrode, the second insulation part having a second insulation part mounting surface formed on a same side as the first electrode mounting surface and the second electrode mounting surface, wherein
a unit mounting surface including the first electrode mounting surface, the second electrode mounting surface, the first insulation part mounting surface, and the second insulation part mounting surface forms a flat surface.
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