US 12,328,924 B2
Semiconductor device
Yasuhiro Isobe, Tokyo (JP); Hung Hung, Kawasaki Kanagawa (JP); Akira Yoshioka, Yokohama Kanagawa (JP); Toru Sugiyama, Tokyo (JP); and Masaaki Onomura, Setagaya Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Sep. 7, 2021, as Appl. No. 17/468,315.
Claims priority of application No. 2021-038520 (JP), filed on Mar. 10, 2021.
Prior Publication US 2022/0293745 A1, Sep. 15, 2022
Int. Cl. H10D 30/47 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01)
CPC H10D 64/112 (2025.01) [H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 64/01 (2025.01); H10D 64/111 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first nitride semiconductor layer;
a second nitride semiconductor layer provided on the first nitride semiconductor layer and the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer;
a first electrode provided on the second nitride semiconductor layer;
a second electrode provided on the second nitride semiconductor layer;
a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in contact with the second nitride semiconductor layer and the first insulating film including a first insulating material;
a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, the second insulating film being provided on the first insulating film, the second insulating film being provided on the second nitride semiconductor layer between the first insulating film and the second electrode and the second insulating film including a second insulating material;
a third electrode provided on the second insulating film between the first electrode and the first insulating film, the second insulating film being provided between the second nitride semiconductor layer and the third electrode in a first direction from the first nitride semiconductor layer to the second nitride semiconductor layer;
a fourth electrode including a first electrode portion and a second electrode portion, the first electrode portion being provided on the second insulating film between the third electrode and the first insulating film in a second direction horizontally crossing the first direction, the second electrode portion being provided on the second insulating film, and the second insulating film provided on the first insulating film, and the second electrode portion being electrically connected to the first electrode portion, and the first electrode portion being provided between the third electrode and the second electrode portion in the second direction;
a third insulating film provided between the first insulating film and the second electrode and between the second nitride semiconductor layer and the second insulating film, the third insulating film being in contact with the second nitride semiconductor layer and the third insulating film including the first insulating material; and
a fifth electrode including a third electrode portion and a fourth electrode portion, the third electrode portion being provided above the second insulating film between the first insulating film and the third insulating film, the fourth electrode portion being provided above the second insulating film on the third insulating film and the fourth electrode portion being electrically connected to the third electrode portion.