| CPC H10D 62/151 (2025.01) [H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6741 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/258 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01)] | 20 Claims |
|
1. A semiconductor device, comprising:
a substrate including a center region and an edge region;
a first active pattern on the center region and a second active pattern on the edge region;
a first channel pattern on the first active pattern and a second channel pattern on the second active pattern;
a first source/drain pattern connected to the first channel pattern and a second source/drain pattern connected to the second channel pattern; and
a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern, wherein
each of the first source/drain pattern and the second source/drain pattern include a buffer layer and a main layer on the buffer layer,
the buffer layer of the first source/drain pattern is in contact with the first channel pattern and the buffer layer of the second source/drain pattern is in contact with the second channel pattern,
in each of the first source/drain pattern and the second source/drain pattern, the main layer includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer,
the first semiconductor layer and the second semiconductor layer contain germanium,
a concentration of germanium in the first semiconductor layer on the center region is higher than a concentration of germanium in the first semiconductor layer on the edge region, and
a concentration of germanium in the second semiconductor layer on the center region is lower than a concentration of germanium in the second semiconductor layer on the edge region.
|