US 12,328,917 B2
Semiconductor structure having second contact structure over second side of first S/D structure
Lin-Yu Huang, Hsinchu (TW); Li-Zhen Yu, New Taipei (TW); Huan-Chieh Su, Tianzhong Township, Changhua County (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 25, 2022, as Appl. No. 17/824,329.
Prior Publication US 2023/0387200 A1, Nov. 30, 2023
Int. Cl. H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 62/118 (2025.01) [H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
first nanostructures surrounded by a first gate structure;
a first source/drain (S/D) structure adjacent to the first gate structure;
a first contact structure formed over a first side of the first S/D structure;
a second contact structure formed over a second side of the first S/D structure, wherein the second contact structure comprises a first portion and a second portion, the first portion and the second portion are made of different materials, the first S/D structure has a first width, the second portion has a second width, and the first width is smaller than the second width; and
a dielectric layer formed above the first gate structure, wherein the dielectric layer is in direct contact with the second contact structure.