US 12,328,913 B1
Vertical spintronic devices based on dislocations in single-crystalline semiconductors and methods for their production
Francesca Cavallo, Albuquerque, NM (US); Mengistie Debasu, Albuquerque, NM (US); Max G. Lagally, Albuquerque, NM (US); Emma J. Renteria, Albuquerque, NM (US); and Finley Haines, Albuquerque, NM (US)
Assigned to UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed by UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
Filed on Jun. 9, 2022, as Appl. No. 17/836,705.
Claims priority of provisional application 63/209,289, filed on Jun. 10, 2021.
Int. Cl. H10D 48/00 (2025.01); G01R 33/09 (2006.01); H10D 48/40 (2025.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); G11C 11/16 (2006.01)
CPC H10D 48/385 (2025.01) [G01R 33/093 (2013.01); H10D 48/40 (2025.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); G11C 11/161 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor spintronic device, comprising:
a substrate;
a first ferromagnetic contact layer and a second ferromagnetic contact layer disposed on the substrate; and
a semiconductor nanomembrane comprising a 2D array of screw dislocations throughout its thickness disposed between the first ferromagnetic contact layer and the second ferromagnetic contact layer.