US 12,328,910 B2
Thin-film transistor, manufacturing method thereof, array substrate and display panel
Jiayu He, Beijing (CN); Ce Ning, Beijing (CN); Zhengliang Li, Beijing (CN); Hehe Hu, Beijing (CN); Jie Huang, Beijing (CN); Nianqi Yao, Beijing (CN); Kun Zhao, Beijing (CN); Xue Liu, Beijing (CN); Zhi Wang, Beijing (CN); and Feng Guan, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., TD., Beijing (CN)
Appl. No. 17/772,689
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Jun. 24, 2021, PCT No. PCT/CN2021/102108
§ 371(c)(1), (2) Date Apr. 28, 2022,
PCT Pub. No. WO2021/259361, PCT Pub. Date Dec. 30, 2021.
Claims priority of application No. 202010590208.9 (CN), filed on Jun. 24, 2020.
Prior Publication US 2023/0036385 A1, Feb. 2, 2023
Int. Cl. H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/6757 (2025.01) [H10D 30/0321 (2025.01); H10D 30/6743 (2025.01); H10D 62/121 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A thin-film transistor, comprising: a base substrate and an active layer on the base substrate, wherein
the active layer comprises a plurality of semiconductor nanowires; and
the thin-film transistor further comprises:
a plurality of guiding projections on a side of the base substrate close to the active layer, the plurality of guiding projections extending along a first direction and being arranged at intervals, each guiding projection of the plurality of guiding projections comprising two side walls extending along the first direction, and the plurality of semiconductor nanowires extending along at least one side wall of the plurality of guiding projections, respectively,
wherein the plurality of guiding projections are successively arranged along a second direction perpendicular to the first direction at equal intervals;
each of the plurality of guiding projections comprises a bottom surface in direct contact with the base substrate and a top surface opposite to the bottom surface, and a first side wall and a second side wall between the bottom surface and the top surface, all first side walls of the plurality of guiding projections facing towards a same direction, and all second side walls of the plurality of guiding projections face towards a same direction; and
the plurality of semiconductor nanowires are respectively only disposed on the first side walls facing towards the same direction or the second side walls facing towards the same direction.