	US 12,328,906 B2
	Micron scale tin oxide-based semiconductor devices
Jisung Park, Ithaca, NY (US)
Assigned to Cornell University, Ithaca, NY (US)
Filed by Cornell University, Ithaca, NY (US)
Filed on Jan. 4, 2022, as Appl. No. 17/568,372.
Application 17/568,372 is a continuation of application No. 16/706,126, filed on Dec. 6, 2019, granted, now 11,217,700, issued on Jan. 4, 2022.
Claims priority of provisional application 62/776,913, filed on Dec. 7, 2018.
Prior Publication US 2022/0209015 A1, Jun. 30, 2022
Int. Cl. H01L 21/30 (2006.01); C01G 19/02 (2006.01); C04B 35/457 (2006.01); C04B 35/468 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01); H10K 71/20 (2023.01)

CPC H10D 30/6755 (2025.01) [C01G 19/02 (2013.01); C04B 35/4682 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 64/667 (2025.01); H10D 64/691 (2025.01); H10K 71/233 (2023.02); C04B 2235/3293 (2013.01)]

20 Claims

1. A transparent thin-film transistor (TFT), comprising:

a substrate; and

a semiconductor film comprising a tin oxide-based active semiconductor layer disposed over the substrate;

wherein a drain current of the transparent TFT exceeds 0.4 mA/μm, a switching current ratio over 1.5×10⁸, and a subthreshold swing below 0.3V per decade, and wherein the transparent TFT is depleted at room temperature.