| CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] | 15 Claims |
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1. A semiconductor device comprising:
a first nitride-based semiconductor layer having a first thickness;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap less than a bandgap of the first nitride-based semiconductor layer to form a heterojunction therebetween, wherein the second nitride-based semiconductor layer has a second thickness, and a ratio of the first thickness to the second thickness is in a range from about 0.5 to about 5;
a source electrode and a drain electrode disposed over a source portion and a drain portion of the second nitride-based semiconductor layer, respectively;
a gate electrode disposed over a gate portion of the second nitride-based semiconductor layer and between the source and drain electrodes, so as to define a first drift region between the source and gate portions and a second drift region between the gate and drain portions;
a first stress modulation layer disposed on the second nitride-based semiconductor layer and between the source and gate electrodes and providing the first drift region with a stress, resulting in induction of a first two-dimensional hole gas (2DHG) region within the first drift region; and
a second stress modulation layer disposed on the second nitride-based semiconductor layer and between the gate and drain electrodes and providing the second drift region with a stress, resulting in induction of a second 2DHG region within the second drift region, wherein the ratio of the first thickness to the second thickness is selected such that hole concentrations of the first and second 2DHG regions are greater than those of the heterojunction beneath the source, gate, drain portions of the second nitride-based semiconductor layer.
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