US 12,328,886 B2
Metal-insulator-metal capacitor and methods of manufacturing
Min-Ying Tsai, Kaohsiung (TW); Chih-Ping Chang, Tainan (TW); and Ching I Li, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 9, 2022, as Appl. No. 17/662,571.
Prior Publication US 2023/0361164 A1, Nov. 9, 2023
Int. Cl. H10D 1/68 (2025.01); H10D 1/00 (2025.01); H10D 1/66 (2025.01)
CPC H10D 1/696 (2025.01) [H10D 1/042 (2025.01); H10D 1/047 (2025.01); H10D 1/665 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a metal layer;
one or more dielectric layers at least partially on the metal layer, wherein the one or more dielectric layers comprises a trench region exposing a portion of the metal layer; and
a capacitor structure comprising:
a capacitor bottom metal electrode layer in the trench region and on the portion of the metal layer;
a coating treatment layer on an entire inner periphery of the capacitor bottom metal electrode layer;
an amorphous material layer on the coating treatment layer,
wherein the amorphous material layer comprises a first bandgap; and
an insulator layer stack on the amorphous material layer,
wherein the insulator layer stack comprises a bottom material layer comprising a second bandgap that is lesser relative to the first bandgap.