US 12,328,883 B2
Polycrystalline semiconductor resistor
Ronghua Zhu, Chandler, AZ (US); Jan Claes, Nijmegen (NL); Xu Cheng, Chandler, AZ (US); Xin Lin, Phoenix, AZ (US); Jianhua He, Eindhoven (NL); Todd Roggenbauer, Austin, TX (US); and James Gordon Boyd, Pflugerville, TX (US)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, Inc., Austin, TX (US)
Filed on Jun. 7, 2022, as Appl. No. 17/805,696.
Prior Publication US 2023/0395646 A1, Dec. 7, 2023
Int. Cl. E06B 5/10 (2006.01); E06B 9/06 (2006.01); F41H 5/24 (2006.01); H10D 1/47 (2025.01)
CPC H10D 1/474 (2025.01) 20 Claims
OG exemplary drawing
 
1. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;
a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the silicide structure is located at the first terminal of the polycrystalline resistive structure.