| CPC H10B 43/20 (2023.02) [H10B 43/35 (2023.02); H10B 43/40 (2023.02)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate;
a cell array structure on the substrate, the cell array structure comprising a plurality of electrodes and a plurality of insulating layer alternately stacked, an uppermost one of the plurality of electrodes corresponding to a first string selection line;
a vertical channel structure penetrating the cell array structure and connected to the substrate;
a conductive pad in an upper portion of the vertical channel structure;
a bit line on the cell array structure;
a bit line contact electrically connecting the bit line to the conductive pad;
a recess penetrating the electrode corresponding to the first string selection line; and
a cutting structure disposed in the recess,
wherein the cutting structure penetrates a portion of the conductive pad,
the cutting structure comprises a first cutting layer disposed on a side surface and a bottom surface of the recess and a second cutting layer disposed on the first cutting layer, and
the second cutting layer comprises a material having an etch selectivity with respect to the first cutting layer.
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