| CPC H10B 12/315 (2023.02) [H10B 12/033 (2023.02); H10B 12/34 (2023.02)] | 18 Claims |
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1. A semiconductor device, comprising:
a substrate;
a contact structure at least partially penetrating the substrate, the contact structure including a lower conductive pattern and an upper conductive pattern on the lower conductive pattern, the upper conductive pattern including a nitride of a first metal implanted with a dopant;
a bottom electrode on the substrate, the bottom electrode comprising a conductive oxide connected to the contact structure;
a top electrode on the bottom electrode; and
a dielectric layer separating the top electrode from the bottom electrode,
wherein the upper conductive pattern further contains a concentration of oxygen which decreases in a direction from a top surface of the upper conductive pattern toward an inside of the upper conductive pattern.
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