US 12,328,519 B2
Image sensor
Wen-Shen Wuen, Hsinchu County (TW); Shen-Fu Tsai, Taoyuan (TW); and Cho-Hsuan Jhang, Hsinchu (TW)
Assigned to Novatek Microelectronics Corp., Hsinchu (TW)
Filed by Novatek Microelectronics Corp., Hsinchu (TW)
Filed on Feb. 15, 2022, as Appl. No. 17/671,609.
Prior Publication US 2023/0262351 A1, Aug. 17, 2023
Int. Cl. H04N 25/771 (2023.01); H04N 25/50 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H04N 25/707 (2023.01)
CPC H04N 25/771 (2023.01) [H04N 25/50 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H04N 25/707 (2023.01)] 24 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a photosensitive pixel array, comprising a photosensitive pixel;
a first storage element, configured to store a first sensing result of the photosensitive pixel at a first time point; and
a displacement processing element, coupled to the first storage element to receive the first sensing result,
and configured to generate displacement information,
wherein an image frame with the displacement information is transmitted to an outside of the image sensor,
wherein the first storage element comprises:
a first sampling switch, having a first terminal coupled to a sensing output terminal of the photosensitive pixel; and
a first sampling capacitor, having a first terminal coupled to a second terminal of the first sampling switch and a second terminal coupled to a reference voltage,
wherein the reference voltage is a voltage other than a ground voltage.