US 12,328,138 B2
High frequency transmitter and receiver radio frequency interface including transmit/receive switch with electrostatic discharge protection and biasing schemes
Ying Chen, San Jose, CA (US); Tienyu Chang, Sunnyvale, CA (US); and Xiaohua Yu, San Jose, CA (US)
Assigned to Samsung Electronics Co., Ltd, (KR)
Filed by Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed on Jul. 13, 2022, as Appl. No. 17/864,044.
Claims priority of provisional application 63/336,560, filed on Apr. 29, 2022.
Prior Publication US 2023/0353186 A1, Nov. 2, 2023
Int. Cl. H04B 1/44 (2006.01); H03F 3/24 (2006.01); H04L 5/14 (2006.01)
CPC H04B 1/44 (2013.01) [H03F 3/245 (2013.01); H04L 5/1461 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A device, comprising:
a transmitter (TX) front-end;
a receiver (RX) front-end;
a TX/RX switch disposed in series between the TX front-end and the RX front-end;
a TX output transformer disposed between the TX front-end and an input of the TX/RX switch;
a first capacitor;
at least two diodes; and
a shunt switch disposed between the TX/RX switch and ground and having a gate and a back-gate,
wherein the first capacitor and the at least two diodes is connected between the TX output transformer and the ground, and
wherein the first capacitor is connected in parallel with the at least one of the at least two diodes.