US 12,327,984 B2
Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
James W. Raring, Santa Barbara, CA (US); Mathew Schmidt, Goleta, CA (US); and Christiane Poblenz, Goleta, CA (US)
Assigned to KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed by KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed on Jun. 9, 2021, as Appl. No. 17/343,587.
Application 15/363,756 is a division of application No. 12/883,652, filed on Sep. 16, 2010, granted, now 9,543,738, issued on Jan. 10, 2017.
Application 17/343,587 is a continuation of application No. 16/579,252, filed on Sep. 23, 2019, granted, now 11,070,031.
Application 16/579,252 is a continuation of application No. 16/144,328, filed on Sep. 27, 2018, granted, now 10,424,900, issued on Sep. 24, 2019.
Application 16/144,328 is a continuation of application No. 15/820,047, filed on Nov. 21, 2017, granted, now 10,090,644, issued on Oct. 2, 2018.
Application 15/820,047 is a continuation of application No. 15/363,756, filed on Nov. 29, 2016, granted, now 9,853,420, issued on Dec. 26, 2017.
Application 12/883,652 is a continuation in part of application No. 12/883,093, filed on Sep. 15, 2010, granted, now 8,355,418, issued on Jan. 15, 2013.
Claims priority of provisional application 61/249,568, filed on Oct. 7, 2009.
Claims priority of provisional application 61/243,502, filed on Sep. 17, 2009.
Prior Publication US 2021/0376573 A1, Dec. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/343 (2006.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01); H01S 5/20 (2006.01); H01S 5/227 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01); B28D 5/00 (2006.01); H01L 21/467 (2006.01); H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/40 (2006.01)
CPC H01S 5/34333 (2013.01) [B82Y 20/00 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/0254 (2013.01); H01S 5/2009 (2013.01); H01S 5/227 (2013.01); H01S 5/3202 (2013.01); H01S 5/320275 (2019.08); H01S 5/3407 (2013.01); B28D 5/0011 (2013.01); H01L 21/467 (2013.01); H01S 5/0014 (2013.01); H01S 5/0202 (2013.01); H01S 5/028 (2013.01); H01S 5/32025 (2019.08); H01S 5/3213 (2013.01); H01S 5/4025 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a laser diode device;
a package configured to enclose the laser diode device, wherein
the laser diode device is configured for an application and the laser diode device comprises:
a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
an n-type cladding material overlying the gallium and nitrogen containing material;
an active region comprising at least two quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
a p-type cladding material overlying the active region, at least one of the n-type cladding material or the p-type cladding material being substantially free from AlGaN;
a p-type material overlying the p-type cladding material;
a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
a first facet formed on the first end; and
a second facet formed on the second end.