| CPC H01L 29/7823 (2013.01) [H01L 29/0653 (2013.01); H01L 29/66689 (2013.01)] | 16 Claims |
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1. A microelectronic device, comprising:
a semiconductor material of a substrate, the semiconductor material including a body region having a first conductivity type and a drain drift region having a second conductivity type;
a field relief dielectric layer over the drain drift region, wherein a gate dielectric layer over the body region extends over a junction between the body region and the drain drift region;
a gate electrode over the gate dielectric layer;
a source region having the second conductivity type contacting the body region, the source region having an average dopant density greater than the average dopant density of the body region;
a drain region having the second conductivity type contacting the drain drift region, the drain region having an average dopant density greater than an average dopant density of the drain drift region, the field relief dielectric layer extending from the gate dielectric layer toward the drain region and having a thickness greater than the gate dielectric layer; and
a silicide blocking structure including a sidewall spacer extending from the field relief dielectric layer to the drain region, the drain drift region intersecting a top surface of the substrate between the field relief dielectric layer and the drain region,
wherein the silicide blocking structure includes a polysilicon field plate that extends over the field relief dielectric layer and over the drain drift region between the field relief dielectric layer and the drain region.
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