US 12,327,819 B2
Devices employing thermal and mechanical enhanced layers and methods of forming same
Chen-Hua Yu, Hsinchu (TW); An-Jhih Su, Taoyuan (TW); Wei-Yu Chen, New Taipei (TW); Ying-Ju Chen, Tuku Township (TW); Tsung-Shu Lin, New Taipei (TW); Chin-Chuan Chang, Zhudong Township (TW); Hsien-Wei Chen, Hsinchu (TW); Wei-Cheng Wu, Hsinchu (TW); Li-Hsien Huang, Zhubei (TW); Chi-Hsi Wu, Hsinchu (TW); and Der-Chyang Yeh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/815,390.
Application 15/990,055 is a division of application No. 15/058,818, filed on Mar. 2, 2016, granted, now 9,984,998, issued on May 29, 2018.
Application 17/815,390 is a continuation of application No. 17/073,888, filed on Oct. 19, 2020, granted, now 11,469,218.
Application 17/073,888 is a continuation of application No. 16/458,877, filed on Jul. 1, 2019, granted, now 10,811,394, issued on Oct. 20, 2020.
Application 16/458,877 is a continuation of application No. 15/990,055, filed on May 25, 2018, granted, now 10,347,606, issued on Jul. 9, 2019.
Claims priority of provisional application 62/275,550, filed on Jan. 6, 2016.
Prior Publication US 2022/0359470 A1, Nov. 10, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/18 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06555 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding a plurality of first-level device dies to a dummy wafer through fusion bonding;
encapsulating the plurality of first-level device dies in a first encapsulant; and
forming redistribution lines over and electrically coupling to the plurality of first-level device dies;
attaching the dummy wafer to a carrier; and
after the redistribution lines are formed, de-bonding a structure comprising the plurality of first-level device dies, the first encapsulant, and the redistribution lines from the carrier.