US 12,327,804 B2
Semiconductor device and manufacturing method thereof
Hsiu-Ying Cho, Hsin Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 13, 2022, as Appl. No. 17/743,470.
Prior Publication US 2023/0369258 A1, Nov. 16, 2023
Int. Cl. H01L 23/66 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 23/5286 (2013.01); H01L 23/552 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6688 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a transmission line structure comprising a signal line;
a shielding structure comprising:
conductive strips spaced apart from one and another and having lengthwise directions substantially perpendicular to a lengthwise direction of the signal line;
a first transistor electrically coupled to the transmission line structure; and
a second transistor electrically coupled to at least one of the conductive strips to control the at least one of the conductive strips to be electrically coupled to ground or electrically floating.