US 12,327,802 B2
Semiconductor structure for die crack detection
Chu-Lung Huang, Taoyuan (TW); and Pi-Hsia Wang, Taoyuan (TW)
Assigned to WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed by WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed on Jun. 1, 2022, as Appl. No. 17/829,776.
Claims priority of provisional application 63/219,029, filed on Jul. 7, 2021.
Prior Publication US 2023/0019796 A1, Jan. 19, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 23/58 (2006.01); H10D 10/80 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01)
CPC H01L 23/562 (2013.01) [H01L 23/585 (2013.01); H10D 10/80 (2025.01); H10D 30/4732 (2025.01); H10D 62/85 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A III-V semiconductor die, comprising:
a device area, wherein at least one active device or at least one passive device is formed in the device area; and
a doped semiconductor ring region surrounding the device area, wherein the doped semiconductor ring region has a first width, there is a first distance between an edge of the doped semiconductor ring region and an edge of the III-V semiconductor die, and a ratio of the first width to the first distance is between 1/15 and 2.