US 12,327,800 B2
Semiconductor device and method for selective EMI shielding using a mask
GunHyuck Lee, Incheon (KR); HyunKyu Lee, Gyeonggi-do (KR); and MinJung Kim, Gyeonggi-do (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Jan. 5, 2022, as Appl. No. 17/647,069.
Prior Publication US 2023/0215813 A1, Jul. 6, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/561 (2013.01); H01L 23/3128 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a strip substrate including a plurality of units;
forming a hole in the strip substrate;
depositing an encapsulant over the strip substrate;
disposing a mask over the strip substrate and encapsulant with a leg of the mask disposed in the hole;
forming a shielding layer over the mask and strip substrate;
removing the mask after forming the shielding layer; and
singulating the strip substrate to separate the plurality of units from each other after forming the shielding layer.