US 12,327,799 B2
Semiconductor device and method of forming multi-layer shielding structure with layers of ferromagnetic material, protective material, laminate material or conductive material over the semiconductor device
ChangOh Kim, Incheon (KR); JinHee Jung, Incheon (KR); JiWon Lee, Seoul (KR); and YuJeong Jang, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on May 11, 2021, as Appl. No. 17/317,082.
Prior Publication US 2022/0367381 A1, Nov. 17, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 23/532 (2006.01); H05K 1/02 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/56 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H05K 1/0218 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an electrical component disposed over the substrate;
an encapsulant disposed over the substrate and electrical component; and
a multi-layer shielding structure formed over the encapsulant, wherein the multi-layer shielding structure includes:
(a) a first protection material extending over a top surface and a side surface of the encapsulant where the first protection material is selected from the group consisting of stainless steel, tantalum, molybdenum, titanium, nickel, and chromium,
(b) a first conductive material in contact with the first protection material where the first conductive material is selected from the group consisting of copper, silver, gold, and aluminum,
(c) a ferromagnetic material in contact with the first conductive material where the ferromagnetic material is selected from the group consisting of iron, nickel, nickel iron alloy, iron silicon alloy, silicon steel, nickel iron molybdenum alloy, nickel iron molybdenum copper alloy, iron silicon aluminum alloy, nickel zinc, manganese zinc, other ferrites, amorphous magnetic alloy, amorphous metal alloy, and nanocrystalline alloy,
(d) a second conductive material in contact with the ferromagnetic material where the second conductive material is selected from the group consisting of copper, silver, gold, and aluminum, and
(e) a second protection material in contact with the second conductive material where the second protection material is selected from the group consisting of stainless steel, tantalum, molybdenum, titanium, nickel, and chromium.