US 12,327,787 B2
Semiconductor memory device
Takashi Shimizu, Nagoya (JP); Takashi Fukushima, Yokkaichi (JP); Naomi Fukumaki, Yokkaichi (JP); Hiroko Tahara, Yokkaichi (JP); and Kenichi Ide, Kuwana (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 10, 2021, as Appl. No. 17/447,332.
Application 17/447,332 is a continuation of application No. PCT/JP2020/024598, filed on Jun. 23, 2020.
Prior Publication US 2021/0407905 A1, Dec. 30, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01); H01L 23/53271 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a first stacked body including a plurality of first conductive layers and a plurality of insulating films alternatively stacked in a first direction, the plurality of first conductive layers each including tungsten;
a second stacked body provided adjacent to the first stacked body in a second direction and including a plurality of second conductive layers and the plurality of insulating films alternatively stacked in the first direction, the plurality of second conductive layers being respectively disposed in a same level in the first direction as a corresponding layer of the plurality of first conductive layers, the plurality of second conductive layers including a silicon containing an impurity, the second direction crossing the first direction;
a semiconductor layer extending in the first direction through an inside of the first stacked body;
a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer in the first stacked body;
a plurality of contact plugs respectively provided on a corresponding layer of the plurality of second conductive layers; and
the plurality of first conductive layers, which include the tungsten, are in direct contact on a same plane with the plurality of second conductive layers, which include the silicon containing the impurity, respectively.