US 12,327,786 B2
Decoupling capacitors with back side power rails
Kam-Tou Sio, Zhubei (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 15, 2024, as Appl. No. 18/606,944.
Application 18/606,944 is a continuation of application No. 17/370,902, filed on Jul. 8, 2021, granted, now 11,942,413.
Prior Publication US 2024/0222264 A1, Jul. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H01L 23/5223 (2013.01) [H01L 21/0259 (2013.01); H01L 23/5286 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a first side and a second side;
an active region arranged on the first side, extending along a first lateral direction and comprising a first conduction type of dopants;
a first gate structure arranged on the first side, extending along a second lateral direction perpendicular to the first lateral direction, disposed over the active region, and wrapping a first portion of the active region;
a first interconnecting structure arranged on the first side, electrically coupled to the first gate structure, and disposed over the first gate structure; and
a second interconnecting structure arranged on the second side, electrically coupled to one or more portions of the active region,
wherein the active region, the first gate structure, the first interconnecting structure, and the second interconnecting structure are collectively configured as a decoupling capacitor.